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2.4GHz SiGe,
High IP3 Low-Noise Amplifier
Typical Operating Characteristics (continued)
(P RFIN = -30dBm, Z S = Z L = 50 ? , V CC = +3.0V, f RFIN = 2450MHz, R BIAS = 1.2k ? , T A = +25 ° C, unless otherwise noted.)
10
OUTPUT POWER vs. INPUT POWER
-1
IIP3 vs. R BIAS
-11
INPUT P 1dB vs. R BIAS
5
0
R BIAS = 750 ?
R BIAS = 1.2k ?
-2
-3
-4
T A = +85 ° C
T A = +25 ° C
-12
-13
-14
T A = +85 ° C
-5
-10
-15
R BIAS = 3.9k ?
-5
-6
-7
-8
T A = -40 ° C
-15
-16
-17
-18
T A = +25 ° C
T A = -40 ° C
-20
-9
-19
-30
-25
-20
-15
-10
-5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
INPUT POWER (dBm)
R BIAS (k ? )
R BIAS (k ? )
Pin Description
PIN
1
2, 5
3
4
6
NAME
BIAS
GND
RFIN
V CC
RFOUT
DESCRIPTION
Resistor Bias Control. Connect a resistor, R BIAS , from BIAS to ground. R BIAS sets IP3 and supply
current. The current through this pin is approximately 60mV divided by R BIAS (see Applications
Information ).
Ground. For optimum performance, provide a low-inductance connection to the ground plane.
Amplifier Input. AC-couple to this pin with a DC blocking capacitor. External matching network is
required for optimum performance.
Supply Voltage. Bypass with a capacitor directly to ground at the supply pin. Refer to V CC Line
Bypassing section for more information.
Amplifier Output. AC-coupled internally.
RFOUT
1
BIAS
RFOUT
6
SMA
R1
1.2k ?
U1
2
GND
MAX2644
GND
5
GND
C1
SMA
RFIN
33pF
3
RFIN
V CC
4
Length = 400mils
VCC
GAIN: 17dB
IIP3: -3dBm
Figure 1. High Gain Design
L1
3.3nH
C3
2.2pF
C2
33pF
4
_______________________________________________________________________________________
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